Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage
نویسندگان
چکیده
Article history: Received 30 June 2014 Accepted 8 July 2014 Available online xxxx
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ورودعنوان ژورنال:
- Microelectronics Reliability
دوره 54 شماره
صفحات -
تاریخ انتشار 2014